FDN308P general description this p-channel 2.5v specified mosfet uses a rugged gate version of fairchild?s advanced powertrench process. it has been optimized for power management applications with a wide range of gate drive voltage (2.5v ? 12v). applications ? power management ? load switch ? battery protection features ? ?20 v, ?1.5 a. r ds(on) = 125 m ? @ v gs = ?4.5 v r ds(on) = 190 m ? @ v gs = ?2.5 v ? fast switching speed ? high performance trench technology for extremely low r ds(on) ? supersot tm -3 provides low r ds(on) and 30% higher power handling capability than sot23 in the same footprint g d s supersot -3 tm d s g absolute maximum ratings t a =25 o c unless otherwise noted symbol parameter ratings units v dss drain-source voltage ?20 v v gss gate-source voltage 12 v i d drain current ? continuous (note 1a) ?1.5 a ? pulsed ?10 maximum power dissipation (note 1a) 0.5 p d (note 1b) 0.46 w t j , t stg operating and storage junction temperature range ?55 to +150 c thermal characteristics r ja thermal resistance, junction-to-ambient (note 1a) 250 c/w r jc thermal resistance, junction-to-case (note 1) 75 c/w package marking and ordering information device marking device reel size tape width quantity 308 FDN308P 7?? 8mm 3000 units smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 1of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain?source breakdown voltage v gs = 0 v, i d = ?250 a ?20 v ? bv dss ? t j breakdown voltage temperature coefficient i d = ?250 a,referenced to 25 c ?13 mv/ c i dss zero gate voltage drain current v ds = ?16 v, v gs = 0 v ?1 a i gssf gate?body leakage, forward v gs = 12 v, v ds = 0 v 100 na i gssr gate?body leakage, reverse v gs = ?12 v v ds = 0 v ?100 na on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = ?250 a ?0.6 ?1.0 ?1.5 v ? v gs(th) ? t j gate threshold voltage temperature coefficient i d = ?250 a,referenced to 25 c 3 mv/ c r ds(on) static drain?source on?resistance v gs = ?4.5 v, i d = ?1.5 a v gs = ?2.5 v, i d = ?1.3 a v gs = ?4.5 v, i d = ?1.5a t j =125 c 86 136 114 125 190 178 m ? i d(on) on?state drain current v gs = ?4.5 v, v ds = ?5 v ?5 a g fs forward transconductance v ds = ?5 v, i d = ?1.5 a 12 s dynamic characteristics c iss input capacitance 341 pf c oss output capacitance 83 pf c rss reverse transfer capacitance v ds = ?10 v, v gs = 0 v, f = 1.0 mhz 43 pf t d(on) turn?on delay time 8 16 ns t r turn?on rise time 10 20 ns t d(off) turn?off delay time 12 22 ns t f turn?off fall time v dd = ?10 v, i d = ?1 a, v gs = ?4.5 v, r gen = 6 ? 8 16 ns q g total gate charge 3.8 5.4 nc q gs gate?source charge 0.8 nc q gd gate?drain charge v ds = ?10v, i d = ?1.5 a, v gs = ?4.5 v 1.0 nc drain?source diode characteristics and maximum ratings i s maximum continuous drain?source diode forward current ?0.42 a v sd drain?source diode forward voltage v gs = 0 v, i s = ?0.42 (note 2) ?0.7 ?1.2 v notes: 1. r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the so lder mounting surface of the drain pins. r jc is guaranteed by design while r ca is determined by the user's board design. a) 250 c/w when mounted on a 0.02 in 2 pad of 2 oz. copper. b) 270c/w when mounted on a minimum pad. scale 1 : 1 on letter size paper 2. pulse test: pulse width 300 s, duty cycle 2.0% FDN308P smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 2of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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